super323 ? ? sot323 pnp silicon power (switching) transistor issue 1 - september 1998 features * 500mw power dissipation * 1a peak pulse current * excellent h fe characteristics up to 1a (pulsed) * low saturation voltage * low equivalent on resistance; r ce(sat) applications * boost functions in dc-dc converters * motor driver functions device type complement partmarking r ce(sat) ZUMT720 zumt619 t73 240m v at 750ma absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5 v peak pulse current** i cm -1 a continuous collector current i c -0.75 a base current i b -200 ma power dissipation at t amb =25c* p tot 385 ? 500 ? mw operating and storage temperature range t j :t stg -55 to +150 c ? recommended p tot calculated using fr4 measuring 10 x 8 x 0.6mm (still air). ? maximum power dissipation is calculated assuming that the device is mounted on fr4 size25x25x0.6mm and using comparable measurement methods adopted by other suppliers. ZUMT720
electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -40 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -40 v i c = -10ma* emitter-base breakdown voltage v (br)ebo -5 v i e = -100 m a collector cut-off current i cbo -10 na v cb =-35v emitter cut-off current i ebo -10 na v eb =-4v collector emitter cut-off current i ces -10 na v ces =-35v collector-emitter saturation voltage v ce(sat) -50 -90 -140 -180 -65 -120 -200 -250 mv mv mv mv i c = -0.1a, i b = -10ma* i c = -0.25a, i b =-20ma* i c = -0.5a, i b =-50ma* i c = -0.75a, i b =-100ma* base-emitter saturation voltage v be(sat) -1000 -1100 mv i c = -0.75a, i b = -100ma* base-emitter turn-on voltage v be(on) -890 -1100 mv i c = -0.75a, v ce = -2v* static forward current transfer ratio h fe 300 300 90 40 20 510 450 190 60 30 i c = -10ma, v ce =-2v* i c = -0.1a, v ce = -2v* i c = -0.5a, v ce =-2v* i c = -0.75a, v ce = -2v* i c = -1a, v ce = -2v* transition frequency f t 220 mhz i c = -50ma, v ce =-10v f= 100mhz output capacitance c obo 8pfv cb = -10v, f=1mhz turn-on time t (on) 75 ns v cc = -10v, i c =-0.75a i b1 =i b2 =-100ma turn-off time t (off) 315 ns *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% ZUMT720
ZUMT720 1m 1m 1m 100m 100 1m 1m i c - collector current (a) v ce(sat) v i c 0 v ce(sat) - (v) ic/ib=10 ic/ib=50 ic/ib=100 +25c -55c h fe - typical gain +100c 0 i c - collector current (a) h fe v i c v be(on) - (v) 0 i c - collector current (a) v be(on) v i c +100c +150c v ce(sat) - (v) +25c 0 i c - collector current (a) v ce(sat) v ic +100c +150c v be(sat) - (v) +25c 0 i c - collector current (a) v be(sat) v i c 1s 100ms i c - collector current (a) 10 dc 10m v ce - collector emitter voltage (v) safe operating area 10ms 1ms 100s +25c -55c ic/ib=10 vce=2v -55c ic/ib=10 +25c +150c +100c -55c 10m 100m 1 10 10m 100m 1 10 10m 100m 1 10 10m 100m 1 10 10m 100m 1 10 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 250 500 750 1000 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 110 100m 1 typical characteristics
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